Zoom info: https://stanford.zoom.us/j/550904854

SiSeRO is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors, developed at MIT Lincoln Laboratory. This technology uses a p-MOSFET transistor with a depleted internal gate beneath the transistor channel. The transistor source-drain current is modulated by the transfer of charge into the internal gate. At Stanford, we have developed a readout module based on the drain current of the on-chip transistor to characterize the device. The first results are very encouraging. Recently, we also demonstrated so-called repetitive non-destructive readout (RNDR) for the first time on a SiSeRO device, where signal charge for each pixel can be measured at the end of each transfer cycle and by averaging for a large number of measurements (N), the total noise can be reduced by a factor of 1/sqrt (N). I this talk, we will give a brief description of this new device type and show the first results.